sq4431ey www.vishay.com vishay siliconix s13-1183-rev. c, 20-may-13 1 document number: 65527 for technical questions, contact: automostechsuppo rt@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 automotive p-channel 30 v (d-s) 175 c mosfet features ? trenchfet ? power mosfet ? 100 % r g and uis tested ? aec-q101 qualified c ? material categorization: ? for definitions of co mpliance please see www.vishay.com/doc?99912 notes a. pulse test; pulse width ? 300 s, duty cycle ? 2 %. b. when mounted on 1" square pcb (fr-4 material). product summary v ds (v) - 30 r ds(on) ( ? ) at v gs = - 10 v 0.030 r ds(on) ( ? ) at v gs = - 4.5 v 0.052 i d (a) - 10.8 configuration single s g d p-channel mosfet so-8 sd sd sd gd 5 6 7 8 top view 2 3 4 1 ordering information package so-8 lead (pb)-free and halogen-free sq4431ey-t1-ge3 absolute maximum ratings (t c = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds - 30 v gate-source voltage v gs 20 continuous drain current t c = 25 c i d - 10.8 a t c = 125 c - 6.2 continuous source curre nt (diode conduction) i s - 5.4 pulsed drain current a i dm - 43.2 single pulse avalanche current l = 0.1 mh i as - 21 single pulse avalanche energy e as 22 mj maximum power dissipation a t c = 25 c p d 6 w t c = 125 c 2 operating junction and storage temperature range t j , t stg - 55 to + 175 c thermal resistance ratings parameter symbol limit unit junction-to-ambient pcb mount b r thja 92 c/w junction-to-foot (drain) r thjf 25
sq4431ey www.vishay.com vishay siliconix s13-1183-rev. c, 20-may-13 2 document number: 65527 for technical questions, contact: automostechsuppo rt@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes a. pulse test; pulse width ? 300 s, duty cycle ? 2 %. b. guaranteed by design, not subj ect to production testing. c. independent of operating temperature. ? ? ? ? ? stresses beyond those listed under absolute maximum ratings ma y cause permanent damage to th e device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those in dicated in the operational sectio ns of the specifications is not implied. exposure to absolute maximum rating conditions for extended pe riods may affect device reliability. ? specifications (t c = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0, i d = - 250 a - 30 - - v gate-source threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 1.5 - 2.0 - 2.5 gate-source leakage i gss v ds = 0 v, v gs = 20 v - - 100 na zero gate voltage drain current i dss v gs = 0 v v ds = - 30 v - - - 1 a v gs = 0 v v ds = - 30 v, t j = 125 c - - - 50 v gs = 0 v v ds = - 30 v, t j = 175 c - - - 150 on-state drain current a i d(on) v gs = - 10 v v ds ??? - 5 v - 40 - - a drain-source on-state resistance a r ds(on) v gs = - 4.5 v i d = - 5 a - 0.045 0.052 ? v gs = - 10 v i d = - 6 a - 0.022 0.030 v gs = - 10 v i d = - 6 a, t j = 125 c - 0.027 0.032 v gs = - 10 v i d = - 6 a, t j = 175 c - 0.035 0.042 forward transconductance b g fs v ds = - 15 v, i d = - 6 a - 25 - s dynamic b input capacitance c iss v gs = 0 v v ds = - 15 v, f = 1 mhz - 1010 1265 pf output capacitance c oss - 243 - reverse transfer capacitance c rss - 167 - total gate charge c q g v gs = - 10 v v ds = - 15 v, i d = - 7.2 a -25- nc gate-source charge c q gs -4- gate-drain charge c q gd -5- gate resistance r g f = 1 mhz 1.5 3.36 5.5 ? turn-on delay time c t d(on) v dd = - 15 v, r l = 15 ? i d ? - 1 a, v gen = - 10 v, r g = 6 ? -10- ns rise time c t r -12- turn-off delay time c t d(off) -33- fall time c t f -15- source-drain diode ratings and characteristics b pulsed current a i sm -- 40- a forward voltage v sd i f = - 2.1 a, v gs = 0 - - 0.8 - 1.1 v
sq4431ey www.vishay.com vishay siliconix s13-1183-rev. c, 20-may-13 3 document number: 65527 for technical questions, contact: automostechsuppo rt@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t a = 25 c, unless otherwise noted) output characteristics transconductance capacitance transfer characteristics on-resistance vs. drain current gate charge 0 6 12 18 24 30 0246810 v gs =10vthru5v v gs =4v v d s - drain-to- s ource voltage (v) - drain current (a) i d v gs =3v 0 5 10 15 20 25 0 3 6 9 12 15 g f s -tran s conductance ( s ) i d - drain current (a) t c = 125 c t c = - 55 c t c = 25 c c r ss 0 500 1000 1500 2000 0 5 10 15 20 25 30 c i ss c o ss v d s - drain-to- s ource voltage (v) c - capacitance (pf) 0 6 12 18 24 30 0246810 t c = 125 c t c = 25 c t c = - 55 c v gs - g ate-to- s ource voltage (v) - drain current (a) i d 0.00 0.03 0.06 0.09 0.12 0.15 0 6 12 18 24 30 r d s (on) -on-re s i s tance () i d - drain current (a) v gs gs = 10 v 0 5 10 15 20 25 0 2 4 6 8 10 v d s =15v q g - total g ate charge (nc) v gs - g ate-to- s ource voltage (v) i d =7.2a
sq4431ey www.vishay.com vishay siliconix s13-1183-rev. c, 20-may-13 4 document number: 65527 for technical questions, contact: automostechsuppo rt@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t a = 25 c, unless otherwise noted) on-resistance vs. junction temperature source drain diode forward voltage on-resistance vs. junction temperature on-resistance vs. gate-to-source voltage threshold voltage - 40 - 38 - 36 - 34 - 32 - 30 - 50 - 25 0 25 50 75 100 125 150 175 i d =1ma t j - junction temperature (c) - drain-to- s ource voltage (v) v d s 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1 0.01 0.001 0.1 10 100 t j = 25 c t j = 150 c v s d - s ource-to-drain voltage (v) - s ource current (a) i s 0.6 0.9 1.2 1.5 1.8 - 50 - 25 0 25 50 75 100 125 150 175 i d =7a v gs =4.5v v gs =10v t j - junction temperature (c) (normalized) - on-re s i s tance r d s (on) 0.00 0.05 0.10 0.15 0.20 0.25 0246810 t j = 25 c t j = 150 c - on-re s i s tance ( ) r d s (on) v gs - g ate-to- s ource voltage (v) - 0.4 - 0.1 0.2 0.5 0.8 1.1 - 50 - 25 0 25 50 75 100 125 150 175 i d = 250 a i d =1ma variance (v) v gs (th) t j - temperature (c)
sq4431ey www.vishay.com vishay siliconix s13-1183-rev. c, 20-may-13 5 document number: 65527 for technical questions, contact: automostechsuppo rt@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 thermal ratings (t a = 25 c, unless otherwise noted) safe operating area normalized thermal transient impedance, junction-to-ambient v ds - drain-to-source v oltage ( v ) * v gs minimum v gs at w hich r ds(on) is specified - drain current (a) i d t c = 25 c single pulse 10 ms 1 s 10 s, dc 1 ms r ds(on) * limited by 100 ms 0.01 0.1 1 10 100 0.01 0.1 1 10 100 b v dss limited i dm limited 10 -3 10 -2 0 0 6 0 1 1 10 -1 10 -4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 s ingle pul s e duty cycle = 0.5 sq uare wave pul s e duration ( s ) e v i t c e f f e d e z i l a m r ot nn e i s n a r t e c n a d e p m i l a m r e h t 1. duty cycle, d = 2. per unit ba s e = r thja = 92 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 note s : 4. s urface mounted p dm
sq4431ey www.vishay.com vishay siliconix s13-1183-rev. c, 20-may-13 6 document number: 65527 for technical questions, contact: automostechsuppo rt@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 thermal ratings (t a = 25 c, unless otherwise noted) normalized thermal transient impedance, junction-to-foot note ? the characteristics shown in the two graphs ? - normalized transient thermal impedance junction-to-ambient (25 c) ? - normalized transient thermal impedance junction-to-foot (25 c) ? are given for general guidelines only to enable the user to ge t a ball park indication of part capabilities. the data are ext racted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. the latter is valid for the part mounted on printed circuit board - fr4, size 1" x 1" x 0.062" , double sided with 2 oz. copper, 100 % on both sides. the part ca pabilities can widely vary depending on actual application parameters and operating conditions. ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? vishay siliconix maintains worldw ide manufacturing ca pability. products may be manufactured at one of several qualified locatio ns. reliability da ta for silicon technology and package reliability represent a composite of all qu alified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65527 . 10 -3 10 -2 0 1 1 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square wave pulse duration (s) e v i t c e f f e d e z i l a m r o t nn e i s n a r t e c n a d e p m i l a m r e h t
ordering information www.vishay.com vishay siliconix revision: 21-oct-15 1 document number: 66624 for technical questions, contact: automostechsuppo rt@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 so-8 ordering codes for the sq rugged series power mosfets in the so-8 package: note a. old ordering code is obsolete and no longer valid for new orders datasheet part number o ld ordering code a new ordering code sq4005ey - sq4005ey-t1_ge3 sq4050ey sq4050ey-t1-ge3 sq4050ey-t1_ge3 sq4182ey sq4182ey-t1-ge3 sq4182ey-t1_ge3 sq4184ey sq4184ey-t1-ge3 sq4184ey-t1_ge3 sq4282ey sq4282ey-t1-ge3 sq4282ey-t1_ge3 sq4284ey sq4284ey-t1-ge3 sq4284ey-t1_ge3 sq4401ey sq4401ey-t1-ge3 sq4401ey-t1_ge3 sq4410ey sq4410ey-t1-ge3 sq4410ey-t1_ge3 sq4425ey sq4425ey-t1-ge3 sq4425ey-t1_ge3 sq4431ey sq4431ey-t1-ge3 sq4431ey-t1_ge3 sq4435ey sq4435ey-t1-ge3 sq4435ey-t1_ge3 sq4470ey sq4470ey-t1-ge3 sq4470ey-t1_ge3 sq4483beey sq4483beey-t1-ge3 sq4483beey-t1_ge3 sq4483ey - sq4483ey-t1_ge3 sq4532aey - sq4532aey-t1_ge3 sq4840ey sq4840ey-t1-ge3 sq4840ey-t1_ge3 sq4850ey sq4850ey-t1-ge3 sq4850ey-t1_ge3 sq4917ey sq4917ey-t1-ge3 sq4917ey-t1_ge3 sq4920ey sq4920ey-t1-ge3 sq4920ey-t1_ge3 sq4937ey sq4937ey-t1-ge3 sq4937ey-t1_ge3 sq4940aey sq4940aey-t1-ge3 sq4940aey-t1_ge3 sq4946aey sq4946aey-t1-ge3 sq4946aey-t1_ge3 sq4949ey sq4949ey-t1-ge3 sq4949ey-t1_ge3 SQ4961EY SQ4961EY-t1-ge3 SQ4961EY-t1_ge3 sq9407ey sq9407ey-t1-ge3 sq9407ey-t1_ge3 sq9945bey sq9945bey-t1-ge3 sq9945bey-t1_ge3
vishay siliconix package information document number: 71192 11-sep-06 www.vishay.com 1 dim millimeters inches min max min max a 1.35 1.75 0.053 0.069 a 1 0.10 0.20 0.004 0.008 b 0.35 0.51 0.014 0.020 c 0.19 0.25 0.0075 0.010 d 4.80 5.00 0.189 0.196 e 3.80 4.00 0.150 0.157 e 1.27 bsc 0.050 bsc h 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 l 0.50 0.93 0.020 0.037 q0808 s 0.44 0.64 0.018 0.026 ecn: c-06527-rev. i, 11-sep-06 dwg: 5498 4 3 1 2 5 6 8 7 h e h x 45 c all le a d s q 0.101 mm 0.004" l ba 1 a e d 0.25 mm (g a ge pl a ne) s oic (narrow): 8-lead jedec p a rt n u m b er: m s -012 s
application note 826 vishay siliconix www.vishay.com document number: 72606 22 revision: 21-jan-08 application note recommended minimum pads for so-8 0.246 (6.248) recommended mi nimum pads dimensions in inches/(mm) 0.172 (4.369) 0.152 (3.861) 0.047 (1.194) 0.028 (0.711) 0.050 (1.270) 0.022 (0.559) return to index return to index
legal disclaimer notice www.vishay.com vishay revision: 13-jun-16 1 document number: 91000 disclaimer ? all product, product specifications and data ar e subject to change with out notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of th e products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, vi shay disclaims (i) any and all liability arising out of the application or use of any product , (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all implied warranties, includ ing warranties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain types of applicatio ns are based on vishays knowledge of typical requirements that are often placed on vishay products in generic applications. such statements are not binding statements about the suitability of products for a particular applic ation. it is the customers responsibility to validate tha t a particular product with the prope rties described in the product sp ecification is suitable for use in a particular application. parameters provided in datasheets and / or specifications may vary in different ap plications and perfor mance may vary over time. all operating parameters, including ty pical parameters, must be va lidated for each customer application by the customer s technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product could result in personal injury or death. customers using or selling vishay product s not expressly indicated for use in such applications do so at their own risk. please contact authorized vishay personnel to obtain writ ten terms and conditions rega rding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.
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